| PART |
Description |
Maker |
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| BA-5112U BA-5112 |
LITHIUM SULFUR DIOXIDE PRIMARY BATTERY SYSTEM 初步锂二氧化硫电池系
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| LO26SX |
3.0 V Primary lithium - sulfur dioxide High drain capability D- size spiral cell
|
saftbatteries
|
| G062 |
3.0 V Primary lithium-sulfur dioxide High drain capability AA- size spiral cell
|
saftbatteries
|
| FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0 |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 7A 100V的，0.300欧姆，拉德硬，SEGR性，P通道功率MOSFET
7A/ -100V/ 0.300 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
5A/ -100V/ 0.680 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| G52 |
3.0V Primary lithium-sulfur dioxide (Li-SO2)High drain capability C-size spiral cell
|
SAFT
|
| LO30SHX |
3.0V Primary lithium - sulfur dioxide (Li-SO2)Very high drain and pulse capabilityThin D - size spiral cell
|
SAFT
|
| FSS230R FSS230D FN4054 FSS230R4 FSS230D1 FSS230D3 |
RC NETWORK 220 OHM/100PF 5% SMD 8 A, 200 V, 0.44 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
8A,200V,0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSJ260R4 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| MN-TM93-03XA5 MN-TM93-04XA5 MN-TM94-02XC5 MN-TM96- |
PVC, UL 300 V, cold resistant (- 40掳C)
PVC, UL 300 V, cold resistant (- 40°C)
|
SHIELD s.r.l.
http://
|
| FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 FSYC160D FS |
From old datasheet system
Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTY |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
